LIGHT EMITTING ELEMENT AND LIGHT EMITTING DEVICE

摘要

A light emitting element includes a semiconductor stack including an n-side semiconductor layer, and a p-side semiconductor layer disposed in a portion of an area above the n-side semiconductor layer, the semiconductor stack having a plurality of first lateral surfaces and a plurality of second lateral surfaces; an n-pad electrode disposed in an area different from an area where the p-side semiconductor layer is disposed above the n-side semiconductor layer, the n-pad electrode being electrically connected to the n-side semiconductor layer, and the n-pad electrode having a plurality of lateral surfaces that oppose the first lateral surfaces of the semiconductor stack; a first light transmissive film disposed in contact with the first lateral surfaces of the semiconductor stack; and a second light transmissive film disposed in contact with the second lateral surfaces of the semiconductor stack. A refractive index of the second light transmissive film is lower than a refractive index of the semiconductor stack, and higher than a refractive index of the first light transmissive film.

主权项

1. A light emitting element comprising:
a semiconductor stack including an n-side semiconductor layer, and a p-side semiconductor layer disposed in a portion of an area above the n-side semiconductor layer, the semiconductor stack having a plurality of first lateral surfaces and a plurality of second lateral surfaces; an n-pad electrode disposed in an area different from an area where the p-side semiconductor layer is disposed above the n-side semiconductor layer, the n-pad electrode being electrically connected to the n-side semiconductor layer, and the n-pad electrode having a plurality of lateral surfaces that oppose the first lateral surfaces of the semiconductor stack; a first light transmissive film disposed in contact with the first lateral surfaces of the semiconductor stack; and a second light transmissive film disposed in contact with the second lateral surfaces of the semiconductor stack; wherein a refractive index of the second light transmissive film is lower than a refractive index of the semiconductor stack, and higher than a refractive index of the first light transmissive film.