| 发明名称 |
SEMICONDUCTOR LIGHT EMITTING DEVICE |
| 摘要 |
According to one embodiment, a semiconductor light-emitting device includes a semiconductor layer including a light emitting layer; and a phosphor layer provided on the semiconductor layer. The phosphor layer includes a plurality of phosphors, −0.05<A×(AR)+B×(Np)+C<0.05 being satisfied for −0.149055−(3×0.011797)≦constant A≦−0.149055+(3×0.011797), −0.000192−(3×0.00002461)≦constant B≦−0.000192+(3×0.00002461), and 0.0818492−(3×0.005708)≦constant C≦0.0818492+(3×0.005708). AR is a ratio of a thickness of the phosphor layer to a width of the phosphor layer, and Np is a number of the plurality of phosphors. |
| 申请公布号 |
US2017062667(A1) |
申请公布日期 |
2017.03.02 |
| 申请号 |
US201615061605 |
申请日期 |
2016.03.04 |
| 申请人 |
Kabushiki Kaisha Toshiba |
发明人 |
AKIMOTO Yosuke;Kojima Akihiro;Shimada Miyoko;Tomizawa Hideyuki;Furuyama Hideto;Sugizaki Yoshiaki |
| 分类号 |
H01L33/50 |
主分类号 |
H01L33/50 |
| 代理机构 |
|
代理人 |
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| 主权项 |
1. A semiconductor light emitting device, comprising:
a semiconductor layer including a light emitting layer; and a phosphor layer provided on the semiconductor layer, the phosphor layer including a plurality of phosphors, −0.05<A×(AR)+B×(Np)+C<0.05 being satisfied for
−0.149055−(3×0.011797)≦constant A≦−0.149055+(3×0.011797),−0.000192−(3×0.00002461)≦constant B≦−0.000192+(3×0.00002461), and0.0818492−(3×0.005708)≦constant C≦0.0818492+(3×0.005708), where AR is a ratio of a thickness of the phosphor layer to a width of the phosphor layer, and Np is a number of the plurality of phosphors. |
| 地址 |
Minato-ku JP |
