发明名称 |
SEMICONDUCTOR DEVICE, STORAGE DEVICE, RESISTOR CIRCUIT, DISPLAY DEVICE, AND ELECTRONIC DEVICE |
摘要 |
A semiconductor device capable of retaining data for a long time is provided. A semiconductor device includes a first transistor including a first insulator, a first oxide semiconductor, a first gate, and a second gate; a second transistor including a second oxide semiconductor, a third gate, and a fourth gate; and a node. The first gate and the second gate overlap with each other with the first oxide semiconductor therebetween. The third gate and the fourth gate overlap with each other with the second oxide semiconductor therebetween. The first oxide semiconductor and the second gate overlap with each other with the first insulator therebetween. One of a source and a drain of the first transistor, the first gate, and the fourth gate are electrically connected to the node. The first insulator is configured to charges. |
申请公布号 |
US2017062433(A1) |
申请公布日期 |
2017.03.02 |
申请号 |
US201615238933 |
申请日期 |
2016.08.17 |
申请人 |
Semiconductor Energy Laboratory Co., Ltd. |
发明人 |
MIYAIRI Hidekazu;ENDO Masami |
分类号 |
H01L27/105;H01L29/66;H01L29/792;H01L29/24;H01L27/12;H01L29/786 |
主分类号 |
H01L27/105 |
代理机构 |
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代理人 |
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主权项 |
1. A semiconductor device comprising:
a first transistor including a first insulator, a first oxide semiconductor, a first gate, and a second gate; a second transistor including a second oxide semiconductor, a third gate, and a fourth gate; and a node electrically connected to one of a source and a drain of the first transistor, the first gate, and the fourth gate, wherein the first gate and the second gate overlap with each other with the first oxide semiconductor therebetween, wherein the third gate and the fourth gate overlap with each other with the second oxide semiconductor therebetween, wherein the first oxide semiconductor and the second gate overlap with each other with the first insulator therebetween, and wherein the first insulator is configured to hold charges. |
地址 |
Atsugi-shi JP |