FORMATION OF OHMIC CONTACTS FOR A DEVICE PROVIDED WITH A REGION MADE OF III-V MATERIAL AND A REGION MADE OF ANOTHER SEMICONDUCTOR MATERIAL

摘要

A production of contact zones for a transistor device including the steps of:
a) forming at least one layer made of a compound based on semiconductor and metal on one or more first semiconductor region(s) of a first N-type transistor and on one or more second semiconductor region(s) of a second P-type transistor resting on a same substrate, the first regions being based on a III-V type material whereas the second semiconductor regions are based on another material different from the III-V material,the semiconductor of the compound being an N-type dopant of the III-V material,b) carrying out at least one thermal annealing so as to form on the first semiconductor regions first contact zones and on the second semiconductor regions second contact zones based on a semiconductor and metal compound while increasing the N-doping of the III-V material.

主权项

1. A Method of producing contact zones for a transistor device including the following steps:
a) forming at least one layer made of a compound based on semiconductor and metal on one or more first semiconductor region(s) of a first N-type transistor and on one or more second semiconductor region(s) of a second P-type transistor resting on a same substrate, the first regions being based on a III-V type material whereas the second semiconductor regions are based on another material different from the III-V material, b) carrying out at least one thermal annealing so as to form on the first semiconductor regions first contact zones based on a semiconductor and metal compound and on the second semiconductor regions second contact zones based on a semiconductor and metal compound while carrying out an N-doping of the III-V material or by increasing the N-doping of the III-V material.