发明名称 |
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE |
摘要 |
According to one embodiment, a semiconductor device includes an element isolation insulating film, a gate electrode film, source/drain regions, a channel region, and an air gap. The element isolation insulating film partitions an element arrangement area on one main face side of a semiconductor substrate. The channel region is disposed near a surface of the semiconductor substrate below the gate electrode film. The air gap is disposed at a region of the element isolation insulating film contacting with the channel region. |
申请公布号 |
US2017062423(A1) |
申请公布日期 |
2017.03.02 |
申请号 |
US201614986952 |
申请日期 |
2016.01.04 |
申请人 |
Kabushiki Kaisha Toshiba |
发明人 |
OKANO Kimitoshi |
分类号 |
H01L27/092;H01L21/764;H01L21/8238;H01L21/762;H01L29/78;H01L29/06 |
主分类号 |
H01L27/092 |
代理机构 |
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代理人 |
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主权项 |
1. A semiconductor device comprising:
an element isolation insulating film having a first depth and partitioning an element arrangement area on one main face side of a semiconductor substrate; a gate electrode film disposed above the semiconductor substrate within the element arrangement area, through a gate insulating film, and extending in a first direction; source/drain regions containing a first impurity of a predetermined conductivity type diffused therein, the source/drain regions being disposed near a surface of the semiconductor substrate on both sides of the gate electrode film in a second direction perpendicular to the first direction; a channel region containing a second impurity of a predetermined conductivity type diffused therein, the channel region being disposed near a surface of the semiconductor substrate below the gate electrode film; and an air gap disposed at a region of the element isolation insulating film contacting with the channel region. |
地址 |
Minato-ku JP |