| 发明名称 |
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME |
| 摘要 |
A method for fabricating semiconductor device is disclosed. The method includes the steps of: providing a substrate having a gate structure thereon; forming a silicon layer on the substrate to cover the gate structure entirely; planarizing the silicon layer; and performing a replacement metal gate (RMG) process to transform the gate structure into a metal gate. |
| 申请公布号 |
US2017062416(A1) |
申请公布日期 |
2017.03.02 |
| 申请号 |
US201514873223 |
申请日期 |
2015.10.02 |
| 申请人 |
United Microelectronics Corp. |
发明人 |
Hsu Chia Chang;Lin Chun-Hsien |
| 分类号 |
H01L27/088;H01L29/40;H01L21/768;H01L29/66;H01L21/02 |
主分类号 |
H01L27/088 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method for fabricating semiconductor device, comprising:
providing a substrate having a gate structure thereon; forming a silicon layer on the substrate to cover the gate structure entirely; planarizing the silicon layer; and performing a replacement metal gate (RMG) process to transform the gate structure into a metal gate. |
| 地址 |
Hsin-Chu City TW |
