METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE

摘要

To enhance reliability of a test by suppressing defective bonding of a solder in the test of a semiconductor device, a method of manufacturing the semiconductor device includes: preparing a semiconductor wafer that includes a first pad electrode provided with a first cap film and a second pad electrode provided with a second cap film. Further, a polyimide layer that includes a first opening on the first pad electrode and a second opening on the second pad electrode is formed, and then, a rearrangement wiring that is connected to the second pad electrode via the second opening is formed. Next, an opening is formed in the polyimide layer such that an organic reaction layer remains on each of the first pad electrode and a bump land of the rearrangement wiring, then heat processing is performed on the semiconductor wafer, and then, a bump is formed on the rearrangement wiring.

主权项

1. A method of manufacturing a semiconductor device comprising the steps of:
(a) preparing a semiconductor substrate that includes a first pad electrode and a second pad electrode, the first pad electrode being formed at an uppermost layer of a plurality of wiring layers and having a first metal film formed on a surface of the first pad electrode, and the second pad electrode being electrically connected to the first pad electrode, being formed at the uppermost layer of the plurality of wiring layers and having a second metal film formed on a surface of the second pad electrode; (b) forming a first insulating film having a first opening, for exposing the first metal film in the first pad electrode, and a second opening for exposing the second metal film in the second pad electrode; (c) forming a mask layer on the first insulating film for covering the first opening and exposing the second opening; (d) forming a wiring which is electrically connected to the second pad electrode via the second opening; (e) forming a second insulating film on the first pad electrode and on the wiring; (f) forming a third opening in the second insulating film above the first pad electrode and forming a fourth opening of the second insulating film above the wiring while leaving an organic reaction layer on each surface of the first pad electrode and the wiring; (g) performing heat processing on the semiconductor substrate after the step (f); and (h) forming a bump on the wiring in the fourth opening.