SEMICONDUCTOR DEVICES HAVING METAL GATE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICES HAVING METAL GATE

摘要

A method for manufacturing semiconductor devices having metal gate includes follow steps. A substrate including a plurality of isolation structures is provided. A first nFET device and a second nFET device are formed on the substrate. The first nFET device includes a first gate trench and the second nFET includes a second gate trench. A third bottom barrier layer is formed in the first gate trench and a third p-work function metal layer is formed in the second gate trench, simultaneously. The third bottom barrier layer and the third p-work function metal layer include a same material. An n-work function metal layer is formed in the first gate trench and the second gate trench. The n-work function metal layer in the first gate trench directly contacts the third bottom barrier layer, and the n-work function metal layer in the second gate trench directly contacts the third p-work function metal layer.

主权项

1. A method for manufacturing semiconductor devices having metal gate, comprising:
providing a substrate comprising a plurality of isolation structures formed therein, and a first nFET device and a second nFET device being formed on the substrate, the first nFET device comprising a first gate trench and the second nFET comprising a second gate trench; simultaneously forming a third bottom barrier layer in the first gate trench and a third p-work function metal layer in the second gate trench, the third bottom barrier layer and the third p-work function metal layer comprising a same material; and forming an n-work function metal layer in the first gate trench and the second gate trench, the n-work function metal layer in the first gate trench directly contacting the third bottom barrier layer and the n-work function metal layer in the second gate trench directly contacting the third p-work function metal layer.