SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND STORAGE MEDIUM

摘要

A method of manufacturing a semiconductor device includes preparing a substrate having an interlayer insulating film and a hard mask provided on the interlayer insulating film and having a predetermined pattern, etching the interlayer insulating film to form a trench, forming a MnOx film through an ALD method in a state where the hard mask is left on the interlayer insulating film, the MnOx film being turned into a self-forming barrier film by reacting with the interlayer insulating film, performing a hydrogen radical processing on the MnOx film, forming a Ru film through a CVD method, forming a Cu-based film through a PVD method or by forming a Cu seed through the PVD method, and then performing a Cu plating processing so as to embed the Cu-based film within the trench, and performing a CMP method to remove the hard mask and to form a Cu wiring.

主权项

1. A method of manufacturing a semiconductor device, comprising:
preparing a substrate having an interlayer insulating film and a hard mask provided on the interlayer insulating film and having a predetermined pattern; etching the interlayer insulating film using the hard mask to form a trench; forming a MnOx film through an ALD method in a state where the hard mask is left on the interlayer insulating film, the MnOx film being turned into a self-forming barrier film by reacting with the interlayer insulating film; performing a hydrogen radical processing on a surface of the MnOx film after forming the MnOx film; forming a Ru film through a CVD method after performing the hydrogen radical processing; forming a Cu-based film through a PVD method or by forming a Cu seed through the PVD method after forming the Ru film, and then performing a Cu plating processing so as to embed the Cu-based film within the trench; and performing a CMP method to remove the hard mask and to form a Cu wiring after performing the Cu plating processing, wherein the hard mask is made of a material which allows an oxide to be formed when the MnOx film is formed on the hard mask, the oxide not substantially reduced in the hydrogen radical processing, a portion of the MnOx film corresponding to the hard mask becomes a first Mn-containing film by the hydrogen radical processing as the oxide, a portion of the MnOx film corresponding to the interlayer insulating film becomes a second Mn-containing film which is reduced by the hydrogen radical processing such that Mn is formed on the surface thereof, and the Ru film is not substantially formed on the first Mn-containing film, and is selectively formed on the second Mn-containing film.