WAFER SCALE MONOLITHIC INTEGRATION OF LASERS, MODULATORS, AND OTHER OPTICAL COMPONENTS USING ALD OPTICAL COATINGS

摘要

After forming a monolithically integrated device including a laser and a modulator on a semiconductor substrate, an anti-reflection coating layer is formed over the monolithically integrated device and the semiconductor substrate by an atomic layer deposition (ALD) process. The anti-reflection coating layer is lithographically patterned so that an anti-reflection coating is only present on exposed surfaces of the modulator. After forming an etch stop layer portion to protect the anti-reflection coating, a high reflection coating layer is formed over the etch stop layer, the laser and the semiconductor structure by ALD and lithographically patterned to provide a high reflection coating that is formed solely on a non-output facet of the laser.

主权项

1. A semiconductor structure comprising:
a laser located in a first region of a semiconductor substrate, the laser having a first facet on a first end of the laser through which a laser beam is emitted and a second facet on a second end of the laser opposite the first end; a modulator located in a second region of the semiconductor substrate and optically coupled to the laser; an anti-reflection coating present on exposed surfaces of the modulator including a top surface, two side surfaces, a front surface proximal to the first facet of the laser and a rear surface opposite the front surface; and a high reflection coating present on the second facet of the laser.