| 发明名称 |
MEMORY DEVICE THAT PERFORMS AN ADVANCE READING OPERATION |
| 摘要 |
A memory device includes a semiconductor memory unit, and a controller configured to communicate with a host through a serial interface and access the memory semiconductor unit in response to commands received through the serial interface. The controller, in response to a first read command received through the serial interface to read data in a first page of the semiconductor memory unit, issues a first command to the semiconductor memory unit to read data in the first page and, in addition, a second command to read data in a second page that is consecutive to the first page and not specified in the first read command. |
| 申请公布号 |
US2017062063(A1) |
申请公布日期 |
2017.03.02 |
| 申请号 |
US201615062021 |
申请日期 |
2016.03.04 |
| 申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
TAKEDA Shinya;KITAZUME Toshihiko;KADA Kenichirou;TSUJI Nobuhiro;KODERA Shunsuke;IWATA Tetsuya;FURUYAMA Yoshio;NARAI Hirosuke |
| 分类号 |
G11C16/26;G11C16/08 |
主分类号 |
G11C16/26 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A memory device, comprising:
a semiconductor memory unit; and a controller configured to communicate with a host through a serial interface and access the semiconductor memory unit in response to commands received through the serial interface, wherein the controller, in response to a first read command received through the serial interface to read data in a first page of the semiconductor memory unit, issues a first command to the semiconductor memory unit to read data in the first page and, in addition, a second command to read data in a second page that is consecutive to the first page and not specified in the first read command. |
| 地址 |
Tokyo JP |
