| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method of a silicon carbide substrate capable of obtaining a silicon carbide crystal having little dislocation by suppressing increase of dislocation on a seed substrate main surface.SOLUTION: A manufacturing method of a silicon carbide substrate has following steps. A part of a silicon carbide raw material 8 is sublimed. After the part of the silicon carbide raw material 8 is sublimed, a seed substrate 1 having a main surface 1A is arranged in a growth vessel 10. A silicon carbide crystal 11 is grown on the main surface 1A of the seed substrate 1 by subliming the residue of the silicon carbide raw material 8 in the growth vessel 10.SELECTED DRAWING: Figure 1 |
