| 摘要 |
PROBLEM TO BE SOLVED: To provide a polishing material slurry used in a method for manufacturing a substrate that can form a favorable epitaxial growth film thereon.SOLUTION: A polishing material slurry of the present invention contains polishing abrasive grains having a crystalline diameter of 10 nm or more and 150 nm or less and an average grain size of 0.05 μm or more and 3.0 μm or less and comprising a cerium oxide, and is used for polishing a substrate comprising a single crystal of a nitride of a group 13 element. By polishing a surface of a single crystal of a nitride of a group 13 element using the polishing material slurry, a substrate having multi-thread atomic steps extending one direction on a surface thereof is manufactured. |
