发明名称 III族窒化物表面の化学機械研磨方法
摘要 A method of chemically-mechanically polishing a substrate having a Group III-nitride surface includes providing a chemical-mechanical polishing slurry composition. The slurry composition includes a slurry solution including a liquid carrier and an oxidizer including a transition metal or a per-based compound. The slurry solution includes at least one component that reacts with the Group III-nitride surface to form a softened Group III-nitride surface. The Group III-nitride comprising surface is contacted with the slurry composition by a pad to form the softened Group III-nitride surface. The pad is moved relative to the softened Group III-nitride surface, wherein at least a portion of the softened Group III-nitride surface is removed.
申请公布号 JP6087900(B2) 申请公布日期 2017.03.01
申请号 JP20140502748 申请日期 2012.03.28
申请人 シンマット,インコーポレーテッドSINMAT,INC.;ユニヴァーシティ オブ フロリダ リサーチ ファウンデーション,インコーポレーテッドUNIVERSITY OF FLORIDA RESEARCH FOUNDATION, INC. 发明人 シング,ラジヴ,ケー.;アージュナン,アルル,チャッカラヴァルシ;シング,ディーピカ;ミシュラ,アブダヤ
分类号 H01L21/304;B24B37/00;C09K3/14 主分类号 H01L21/304
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