发明名称 半導体膜、半導体膜の製造方法、太陽電池、発光ダイオード、薄膜トランジスタ、および、電子デバイス
摘要 A semiconductor film, including: an assembly of semiconductor quantum dots containing a metal atom; and at least one ligand that is coordinated to the semiconductor quantum dots and that is selected from a ligand represented by Formula (A), a ligand represented by Formula (B), and a ligand represented by Formula (C): wherein, in Formula (A), X1 represents —SH, —NH2, or —OH; and each of A1 and B1 independently represents a hydrogen atom or a substituent having from 1 to 10 atoms; provided that when A1 and B1 are both hydrogen atoms, X1 represents —SH or —OH; in Formula (B), X2 represents —SH, —NH2, or —OH; and each of A2 and B2 independently represents a hydrogen atom or a substituent having from 1 to 10 atoms; and in Formula (C), A3 represents a hydrogen atom or a substituent having from 1 to 10 atoms.
申请公布号 JP6086721(B2) 申请公布日期 2017.03.01
申请号 JP20120282431 申请日期 2012.12.26
申请人 富士フイルム株式会社 发明人 小野 雅司;菊池 信;田中 淳;鈴木 真之;金光 義彦
分类号 H01L51/30;H01L29/786;H01L31/0352;H01L51/05;H01L51/44 主分类号 H01L51/30
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