| 摘要 |
PROBLEM TO BE SOLVED: To provide a compound semiconductor laminate which includes InAsSb having good crystallinity and excellent flatness as a compound semiconductor layer on an Si substrate.SOLUTION: A compound semiconductor laminate comprises: an Si substrate 10: a first compound semiconductor layer 11 formed on the Si substrate 10; and a second compound semiconductor layer 12 formed on the first compound semiconductor layer 11. The first compound semiconductor layer 11 has a lamination structure of any one or more than one of GaAs, GaSb, InAs, InSb and mixed crystal of GaAs, GaSb, InAs and InSb. The second compound semiconductor layer 12 is an InAsSb(0≤y≤0.3) layer and has a half-width value of a rocking curve of an X-ray diffraction peak corresponding to a plane the same with a plane orientation of a surface of the Si substrate 10 that is 1200 seconds or less, and a mean square value of surface roughness in a region of 10 μm square of the second compound semiconductor layer 12 is 12 nm or less. |
