| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a release MEMS structure in an SOI wafer by a cavity first process using gas HF dry etching.SOLUTION: A method of manufacturing a release MEMS structure includes a step in which on a silicon-on-insulator (SOI) substrate, a component which is not damaged by gas HF dry etching is manufactured, a step in which a release hole is formed at an active silicon layer of the SOI substrate by DRIE, a step in which a cavity is formed at an SiOBOX layer at the lower part of the release hole by the gas HF dry etching, a step in which SiOis deposited on the SOI substrate, a step in which a component which is affected by the gas HF dry etching is manufactured at the SOI substrate, and a step in which an MEMS structure of the SOI substrate is released by Si-DRIE. |
