| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a silicon carbide semiconductor device capable of preventing diffusion of an electrode material into an interlayer insulating film, an electrode formation defect, and deterioration in interface characteristics in a joint interface between an insulating film and a semiconductor.SOLUTION: A MOS structure is formed on a surface of an n-type silicon carbide epitaxial layer 2 deposited on a front surface of an n-type silicon carbide substrate 1. A gate conductive film 9 constituting the MOS structure is covered by an interlayer insulating film 10. A first interlayer insulating film and a second interlayer insulating film are laminated on the interlayer insulating film 10. The first interlayer insulating film is composed of an insulator not including phosphorus and boron. The second interlayer insulating film is composed of an insulator including phosphorus and boron. The interlayer insulating film 10 is covered by a cap insulating film 11. The cap insulating film 11 is covered by a barrier metal film 12. A source electrode 13 is provided so as to cover a part of a surface of the barrier metal film 12 and a contact hole. |
