发明名称 成膜装置
摘要 PROBLEM TO BE SOLVED: To suppress the generation of ununiformity of flow velocity in material gas supplied to a housing chamber.SOLUTION: A CVD (Chemical Vapor Deposition) device includes a housing chamber having an internal space and a material gas supply duct 201 for supplying material gas to the internal space. The material gas supply duct 201 includes a first duct side wall 256 and a second duct side wall 257 facing each other. The first duct side wall 256 includes a first midstream part 256b inclined to a -Y direction in an X direction and a first downstream part 256c forming an obtuse angle with the first midstream part 256b and extending in the X direction from a downstream side end in the X direction in the first midstream part 256b. The second duct side wall 257 includes a second midstream part 257b forming an obtuse angle with the first midstream part 256b and inclined to a Y direction in the X direction and a second downstream part 257c forming an obtuse angle with the second midstream part 256b and extending in the X direction from a downstream side end in the X direction in the second midstream part 256b.
申请公布号 JP6087621(B2) 申请公布日期 2017.03.01
申请号 JP20120285157 申请日期 2012.12.27
申请人 昭和電工株式会社 发明人 武藤 大祐;木村 優介;歌代 智也;高橋 聖一
分类号 H01L21/205;C23C16/455 主分类号 H01L21/205
代理机构 代理人
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