TUNABLE BARRIER TRANSISTORS FOR HIGH POWER ELECTRONICS
摘要
Various aspects of tunable barrier transistors that can be used in high power electronics are provided. In one example, among others, a tunable barrier transistor includes an inorganic semiconducting layer; a source electrode including a nano-carbon film disposed on the inorganic semiconducting layer; a gate dielectric layer disposed on the nano-carbon film; and a gate electrode disposed on the gate dielectric layer over at least a portion of the nano-carbon film. The nano-carbon film can form a source-channel interface with the inorganic semiconducting layer. A gate field produced by the gate electrode can modulate a barrier height at the source-channel interface. The gate field may also modulate a barrier width at the source-channel interface.
申请公布号
EP3134919(A1)
申请公布日期
2017.03.01
申请号
EP20150783542
申请日期
2015.04.24
申请人
University of Florida Research Foundation, Inc.
发明人
LEMAITRE, Max G.;CHEN, Xiao;LIU, Bo;McCARTHY, Mitchell Austin;RINZLER, Andrew Gabriel