| 摘要 |
The present invention is a method that is for producing a semiconductor device electrode and that includes a step wherein a first thin film that comprises a first metal is formed upon a substrate that includes Si, a step wherein a second thin film that comprises a compound of a second metal is formed upon the first thin film, and a step wherein an electrode that comprises a silicide of the first metal is formed by means of a heat treatment. The production method for a semiconductor device electrode is characterized in that hafnium (Hf) is used as the second metal. HfN, HfW, HfB, or the like is suitable as the compound of the second metal. The present invention makes it possible to effectively suppress the oxidation of a metal thin film that is to undergo silicidation when a silicide electrode is formed upon a silicon substrate. |
