| 摘要 |
PROBLEM TO BE SOLVED: To provide a heat treatment method and a heat treatment apparatus capable of raising a temperature on a surface of a substrate more higher while preventing cracking of the substrate.SOLUTION: First of all, weak irradiation is performed with substantially fixed light-emission output and continuously, buffer irradiation is performed in which the light-emission output is gradually increased from L1 to L2. Further continuously, strong irradiation is performed on a semiconductor wafer with an output waveform that becomes light-emission output L3 of which the peak value is greater than that of the light-emission output L2. Since the strong irradiation is performed with the waveform having the peak on the semiconductor wafer which is preheated to a certain extent by the weak irradiation, a temperature on a surface of the semiconductor wafer can be raised more higher. A temperature rising range in the case of instantaneously raising the temperature on the surface of the semiconductor wafer with the strong irradiation can be reduced by performing the buffer irradiation, and wafer cracking can be prevented while suppressing damage given to the semiconductor wafer. |
