N-type thin film transistor

摘要

An N-type thin film transistor includes an insulating substrate, a gate electrode, an insulating layer, a semiconductor carbon nanotube layer, an MgO layer, a functional dielectric layer, a source electrode, and a drain electrode. The gate electrode is located on a surface of the insulating substrate. The insulating layer is located on the gate electrode. The semiconductor carbon nanotube layer is located on the insulating layer. The source electrode and the drain electrode electrically connect the semiconductor carbon nanotube layer, wherein the source electrode and the drain electrode are spaced from each other, and a channel is defined in the semiconductor carbon nanotube layer between the source electrode and the drain electrode. The MgO layer is located on the semiconductor carbon nanotube layer. The functional dielectric layer covers the MgO layer.

主权项

1. An N-type thin film transistor, comprising:
an insulating substrate; a gate electrode on a surface of the insulating substrate; an insulating layer on the gate electrode; a semiconductor carbon nanotube layer on the insulating layer; a source electrode and a drain electrode electrically connected to the semiconductor carbon nanotube layer, wherein the source electrode and the drain electrode are spaced from each other, and a channel is defined in the semiconductor carbon nanotube layer between the source electrode and the drain electrode; an MgO layer on the semiconductor carbon nanotube layer; and a functional dielectric layer covering the MgO layer.