发明名称 Power semiconductor device of stripe cell geometry
摘要 A power semiconductor device of stripe cell geometry including a substrate, a plurality of striped power semiconductor units, and a guard ring structure is provided. The substrate has an active area and a termination area surrounding the active area defined thereon. The striped semiconductor unit includes a striped gate conductive structure. The striped semiconductor units are located in the active area. The guard ring structure is located in the termination area and includes at least a ring-shaped conductive structure surrounding the striped power semiconductor units. The ring-shaped conductive structure and the striped gate conductive structures are formed on the same conductive layer, and at least one of the striped gate conductive structures is separated from the nearby ring-shaped conductive structure and electrically connected to the nearby ring-shaped conductive structure through the gate metal pad.
申请公布号 US9583560(B2) 申请公布日期 2017.02.28
申请号 US201514637457 申请日期 2015.03.04
申请人 UBIQ SEMICONDUCTOR CORP. 发明人 Tu Kao-Way;Tsai Yi-Yun;Chang Yuan-Shun
分类号 H01L29/66;H01L29/06;H01L27/088;H01L29/40;H01L29/423;H01L29/78 主分类号 H01L29/66
代理机构 McClure, Qualey & Rodack, LLP 代理人 McClure, Qualey & Rodack, LLP
主权项 1. A power semiconductor device of stripe cell geometry, comprising: a substrate, the substrate having an active area and a termination area surrounding the active area defined thereon; a plurality of striped power semiconductor units, the striped power semiconductor units being located in the active area, each of the striped power semiconductor units comprising a striped gate conductive structure; and a guard ring structure, the guard ring structure being located in the termination area and comprising at least a ring-shaped conductive structure surrounding the striped power semiconductor units, wherein a body-doped region is defined in the active area through the striped gate conductive structure and a doped region is defined in the termination area through the ring-shaped conductive structure, and there is a fixed distance between the body-doped region and the doped region, at least one of the striped gate conductive structures is separated from the ring-shaped conductive structure innermost of the termination area, a gate metal pad is located above the ring-shaped conductive structures and electrically connected to at least two of the ring-shaped conductive structures.
地址 Zhubei, Hsinchu County TW