| 发明名称 | Inverters and manufacturing methods thereof | ||
| 摘要 | Inverters and methods of manufacture thereof are disclosed. In some embodiments, an inverter includes a substrate and a first tunnel FET (TFET) disposed over the substrate. The first TFET is a first fin field effect transistor (FinFET). A second TFET is over the first TFET. The second TFET is a second FinFET. A junction isolation region is disposed between a source of the first TFET and a source of the second TFET. | ||
| 申请公布号 | US9583490(B2) | 申请公布日期 | 2017.02.28 |
| 申请号 | US201514919568 | 申请日期 | 2015.10.21 |
| 申请人 | Taiwan Semiconductor Manufacturing Company, Ltd. | 发明人 | Peng Cheng-Yi |
| 分类号 | H01L27/12;H01L27/092;H01L21/84;H01L21/8238 | 主分类号 | H01L27/12 |
| 代理机构 | Slater Matsil, LLP | 代理人 | Slater Matsil, LLP |
| 主权项 | 1. An inverter, comprising: a substrate; a first tunnel field effect transistor (TFET) disposed over the substrate, the first TFET comprising a first fin field effect transistor (FinFET); a second TFET disposed over the first TFET, the second TFET comprising a second FinFET; and a junction isolation region disposed between a source of the first TFET and a source of the second TFET, the junction isolation region comprising a semiconductive material. | ||
| 地址 | Hsin-Chu TW | ||