| 摘要 |
Reliability of a semiconductor device is improved. A semiconductor device has a base material of insulating material having a through hole, a terminal formed on a lower surface of the base material, and a semiconductor chip mounted on an upper surface of the base material in a face-up manner. The semiconductor device has a conductive member such as a wire, which electrically connects a pad of the semiconductor chip with an exposed surface of the terminal which is exposed from the through hole of the base material, and has a sealing body for sealing the conductive member, inside of the through hole of the base material, and the semiconductor chip. An anchor is provided in a region of the exposed surface of the terminal which is exposed from the through hole of the base material except for a joint portion joined with the conductive member. |
| 主权项 |
1. A semiconductor device comprising:
a substrate comprising:
a base material having a first surface, a second surface opposite to the first surface, and a through hole formed from one of the first surface and the second surface toward the other one, the base material being comprised of an insulating material; andan external terminal formed on the second surface of the base material, the external terminal being comprised of a metal material;a semiconductor chip having a principal surface, a pad formed on the principal surface, and a back surface opposite to the principal surface, and mounted on the first surface of the base material such that the back surface faces the first surface of the base material;a plating layer formed inside of the through hole and also formed on an exposed surface of the external terminal, the exposed surface being exposed from the through hole of the base material when seen from the first surface of the base material;a wire electrically connecting the pad of the semiconductor chip with the external terminal of the substrate, the wire having a first part connected to a surface of the plating layer, and a second part opposite to the first part;a plurality of first stud bumps formed on the surface of the plating layer such that the first part of the wire is surrounded by the plurality of first stud bumps in plan view; and a sealing body sealing inside of the through hole of the base material, the semiconductor chip, the wire and the plurality of first stud bumps, wherein each of the plurality of first stud bumps has a first portion connected to the surface of the plating layer, and a second portion not connected to the surface of the plating layer, and wherein the second portion of each of the plurality of first stud bumps is in contact with the sealing body. |
