Compact memory device of the EEPROM type with a vertical select transistor

摘要

Integrated non-volatile memory device includes an integrated memory cell of the EEPROM type with a floating-gate transistor and a selection transistor connected in series between a source line and a bit line, and a programming circuit for the memory cell. The selection transistor is connected between the floating-gate transistor and the source line. The programming circuit is configured for programming the at least one memory cell with a programming voltage split between a positive voltage and a negative voltage.

主权项

1. An integrated non-volatile memory device, comprising:
a source line; a bit line; an EEPROM-type memory cell disposed within a semiconductor substrate, the EEPROM-type memory cell comprising a floating-gate transistor and a selection transistor coupled in series between the source line and the bit line, the selection transistor comprising a vertical MOS transistor that is connected between the floating-gate transistor and the source line; and a programming and erasing circuit coupled to the EEPROM-type memory cell, the programming and erasing circuit configured to program the EEPROM-type memory cell with a programming voltage split between a positive voltage and a negative voltage, and configured to electronically erase the EEPROM-type memory cell, wherein the programming voltage is applied between a control gate of the floating-gate transistor and the bit line.