| 发明名称 | Nanostructured titania semiconductor material and its production process | ||
| 摘要 | A nanostructured titania semiconductor material termed TSG-IMP having a predetermined crystal size is produced by a sol-gel method by adding a titanium alkoxide to an alcoholic solution, adding an acid to the alcoholic solution, subjecting the acidic solution to agitation under reflux conditions; stabilizing the medium and adding bidistilled water under reflux until gelation; subjecting the gel to aging until complete formation of the titania which is dried and calcined. | ||
| 申请公布号 | US9580332(B2) | 申请公布日期 | 2017.02.28 |
| 申请号 | US201313922952 | 申请日期 | 2013.06.20 |
| 申请人 | INSTITUTO MEXICANO DEL PETROLEO | 发明人 | Castillo Cervantes Salvador;Mejia Centeno Isidro;Camposeco Solis Roberto;Moran Pineda Florencia Marina;Navarrete Bolanos Juan;Montoya De La Fuente J. Ascension;Vargas Escudero Alfredo |
| 分类号 | C01G23/053;B01J21/06 | 主分类号 | C01G23/053 |
| 代理机构 | Dickinson Wright PLLC | 代理人 | Dickinson Wright PLLC |
| 主权项 | 1. A nanostructured titania semiconductor material TSG-IMP consisting of crystalline amorphous phases: anatase, brookite and rutile, in the following proportions:ActivationCrystalline Amorphous phase (%)TemperatureGeneral(° C.)AnataseBrookiteRutile200-30060-7030-40350-55075-8012-175-12. | ||
| 地址 | Mexico City MX | ||