发明名称 |
Method of manufacturing patterned substrate for culturing cells, patterned substrate, and patterned cell chip |
摘要 |
A method of manufacturing a patterned substrate for culturing cells. The method includes the steps of: (1) preparing a substrate, (2) forming a first plasma polymer layer by integrating a first precursor material on the substrate using a plasma, wherein the first plasma layer inhibits cell adsorption, and wherein the first precursor material is a siloxane-based compound having a siloxane functional group with the Si—O—Si linkage, (3) placing a shadow mask having a predetermined pattern on the first plasma polymer layer thus formed, and (4) forming a second patterned plasma polymer layer by integrating a second precursor material using a plasma, wherein the second patterned plasma layer permits culturing of cells, whereby the patterned substrate is obtained. |
申请公布号 |
US9580681(B2) |
申请公布日期 |
2017.02.28 |
申请号 |
US201514634190 |
申请日期 |
2015.02.27 |
申请人 |
Sungkyunkwan University Foundation for Corporate Collaboration |
发明人 |
Jung Dong Geun;Choi Chang Rok;Kim Kyung Seop |
分类号 |
C08F2/46;C12N5/00;B05D1/00;B05D1/32 |
主分类号 |
C08F2/46 |
代理机构 |
Cesari and McKenna LLP |
代理人 |
Cesari and McKenna LLP |
主权项 |
1. A method of manufacturing a patterned substrate for culturing cells, comprising the steps of:
(1) preparing a substrate; (2) forming a first plasma polymer layer by integrating a first precursor material on the substrate using a plasma, wherein the first plasma layer inhibits cell adsorption and the first precursor material is a siloxane-based compound having a siloxane functional group with the Si—O—Si linkage; (3) placing a shadow mask having a predetermined pattern on the first plasma polymer layer thus formed; and (4) forming a second patterned plasma polymer layer by integrating a second precursor material using a plasma, wherein the second patterned plasma layer permits culturing of cells;whereby the patterned substrate is obtained. |
地址 |
Gyeonggi-do KR |