发明名称 Method of manufacturing patterned substrate for culturing cells, patterned substrate, and patterned cell chip
摘要 A method of manufacturing a patterned substrate for culturing cells. The method includes the steps of: (1) preparing a substrate, (2) forming a first plasma polymer layer by integrating a first precursor material on the substrate using a plasma, wherein the first plasma layer inhibits cell adsorption, and wherein the first precursor material is a siloxane-based compound having a siloxane functional group with the Si—O—Si linkage, (3) placing a shadow mask having a predetermined pattern on the first plasma polymer layer thus formed, and (4) forming a second patterned plasma polymer layer by integrating a second precursor material using a plasma, wherein the second patterned plasma layer permits culturing of cells, whereby the patterned substrate is obtained.
申请公布号 US9580681(B2) 申请公布日期 2017.02.28
申请号 US201514634190 申请日期 2015.02.27
申请人 Sungkyunkwan University Foundation for Corporate Collaboration 发明人 Jung Dong Geun;Choi Chang Rok;Kim Kyung Seop
分类号 C08F2/46;C12N5/00;B05D1/00;B05D1/32 主分类号 C08F2/46
代理机构 Cesari and McKenna LLP 代理人 Cesari and McKenna LLP
主权项 1. A method of manufacturing a patterned substrate for culturing cells, comprising the steps of: (1) preparing a substrate; (2) forming a first plasma polymer layer by integrating a first precursor material on the substrate using a plasma, wherein the first plasma layer inhibits cell adsorption and the first precursor material is a siloxane-based compound having a siloxane functional group with the Si—O—Si linkage; (3) placing a shadow mask having a predetermined pattern on the first plasma polymer layer thus formed; and (4) forming a second patterned plasma polymer layer by integrating a second precursor material using a plasma, wherein the second patterned plasma layer permits culturing of cells;whereby the patterned substrate is obtained.
地址 Gyeonggi-do KR