Light receiving device and image sensor

摘要

A light receiving device includes a substrate having a principal surface and a back surface, the substrate containing GaSb semiconductor co-doped with a p-type dopant and an n-type dopant; a stacked semiconductor layer disposed on the principal surface of the substrate, the stacked semiconductor layer including an optical absorption layer; and an incident surface provided on the back surface of the substrate that receives an incident light. The optical absorption layer includes a super-lattice structure including a first semiconductor layer and a second semiconductor layer that are alternately stacked. In addition, the first semiconductor layer contains gallium and antimony as constituent elements. The second semiconductor layer is composed of a material different from a material of the first semiconductor layer.

主权项

1. A light receiving device comprising:
a substrate having a principal surface and a back surface, the substrate containing GaSb semiconductor, the substrate being co-doped with a p-type &pant and an n-type dopant; a stacked semiconductor layer disposed on the principal surface of the substrate, the stacked semiconductor layer including an optical absorption layer; and an incident surface provided on the back surface of the substrate that receives an incident light, wherein the optical absorption layer includes a super-lattice structure including a first semiconductor layer and a second semiconductor layer that are alternately stacked, the first semiconductor layer contains gallium and antimony as constituent elements, and the second semiconductor layer is composed of a material different from a material of the first semiconductor layer.