发明名称 Deposition apparatus and methods to reduce deposition asymmetry
摘要 One or more embodiments of the invention are directed to deposition apparatuses comprising a grounded top wall, a processing chamber and a plasma source assembly having a conductive hollow cylinder and substantially continuous grounded shield substantially conforming to the shape of the hollow cylinder.
申请公布号 US9580796(B2) 申请公布日期 2017.02.28
申请号 US201113173197 申请日期 2011.06.30
申请人 Applied Materials, Inc. 发明人 Ritchie Alan;Cox Michael S.
分类号 C23C14/00;C23C14/35;C23C16/517;H01J37/32;H01J37/34 主分类号 C23C14/00
代理机构 Servilla Whitney LLC 代理人 Servilla Whitney LLC
主权项 1. A deposition apparatus bounded by a grounded side wall and a grounded top wall, the apparatus comprising: a processing chamber bounded by the grounded side wall, the processing chamber having a ceiling and a floor, the processing chamber having a processing region defined by a pedestal and a cylindrical skirt; a plasma source assembly above the ceiling between the ceiling and the grounded top wall of the processing chamber, the plasma source assembly comprising a conductive hollow cylinder and at least one power source outside of and connected to the conductive hollow cylinder; and a substantially continuous grounded shield outside the processing chamber and around the conductive hollow cylinder and in contact with one or more of the grounded side wall or the grounded top wall of the deposition apparatus, the substantially continuous grounded shield substantially conforming in shape with the conductive hollow cylinder so that a space between the conductive hollow cylinder and the grounded shield is substantially uniform, wherein the power source is connected to the conductive hollow cylinder through a connection rod which does not pass through the continuous grounded shield.
地址 Santa Clara CA US