| 发明名称 | Semiconductor device | ||
| 摘要 | A semiconductor device includes a first chip coupled to an electrical insulator, and a sintered heat conducting layer disposed between the electrical insulator and the first chip. | ||
| 申请公布号 | US9583413(B2) | 申请公布日期 | 2017.02.28 |
| 申请号 | US200912371029 | 申请日期 | 2009.02.13 |
| 申请人 | Infineon Technologies AG | 发明人 | Nikitin Ivan;Mahler Joachim;Behrens Thomas |
| 分类号 | H01L23/48;H01L23/373;H01L23/36;H01L25/065;H01L25/00;H01L23/00 | 主分类号 | H01L23/48 |
| 代理机构 | Dicke, Billig & Czaja, PLLC | 代理人 | Dicke, Billig & Czaja, PLLC |
| 主权项 | 1. A semiconductor device comprising: a first chip coupled to an electrical insulator; and a sintered heat conducting layer disposed between the electrical insulator and the first chip, a first surface of the sintered heat conducting layer directly contacting a surface of the first chip, and a second surface of the sintered heat conducting layer directly contacting an electrically insulating surface of the electrical insulator, wherein the surface of the first chip is completely covered by the first surface of the sintered heat conducting layer. | ||
| 地址 | Neubiberg DE | ||