Interconnection structure including air gap, semiconductor device including air gap, and method of manufacturing the same

摘要

A semiconductor device includes a first insulating layer, a second insulating layer formed on the first insulating layer, a plurality of interconnection lines formed in the second insulating layer, and a first air gap disposed between the first insulating layer and the second insulating layer to surround a lower part of the interconnection lines.

主权项

1. A method of manufacturing a semiconductor device, the method comprising:
forming an etch stop layer on a first insulating layer; forming a second insulating layer on the etch stop layer, wherein the second insulating layer includes' a plurality of interconnection lines; forming a hole passing through the second insulating layer to expose the etch stop layer; removing the etch stop layer through the hole to form a first air gap, and forming a dummy contact plug in the hole, wherein the dummy contact plug passes through the second insulating layer and extends into the first air gap so that a lower part of the dummy contact plug is exposed in the first air gap.