发明名称 Iridium tip, gas field ion source, focused ion beam apparatus, electron source, electron microscope, electron beam applied analysis apparatus, ion-electron multi-beam apparatus, scanning probe microscope, and mask repair apparatus
摘要 There is provided an iridium tip including a pyramid structure having one {100} crystal plane as one of a plurality of pyramid surfaces in a sharpened apex portion of a single crystal with <210> orientation. The iridium tip is applied to a gas field ion source or an electron source. The gas field ion source and/or the electron source is applied to a focused ion beam apparatus, an electron microscope, an electron beam applied analysis apparatus, an ion-electron multi-beam apparatus, a scanning probe microscope or a mask repair apparatus.
申请公布号 US9583299(B2) 申请公布日期 2017.02.28
申请号 US201414455338 申请日期 2014.08.08
申请人 Hitachi High-Tech Science Corporation 发明人 Kozakai Tomokazu;Matsuda Osamu;Sugiyama Yasuhiko;Aita Kazuo;Aramaki Fumio;Yasaka Anto;Oba Hiroshi
分类号 H01J1/304;H01J37/073;H01J37/08;G01Q60/10;G01Q60/24;G01Q70/16;H01J37/21;H01J37/28 主分类号 H01J1/304
代理机构 Banner & Witcoff, Ltd. 代理人 Banner & Witcoff, Ltd.
主权项 1. An iridium tip comprising a pyramid structure wherein an apex portion of the pyramid structure has an apex with <210> orientation surrounded by one {100} crystal plane and two {111} crystal planes, wherein the pyramid structure includes a first layer composed of a single iridium atom constituting the apex of the pyramid structure, a second layer immediately below the first layer and composed of three iridium atoms located at vertices of a triangle, and a third layer immediately below the second layer and composed of six iridium atoms located at vertices and sides of a triangle, and wherein the crystal planes of the pyramid structure are defined by the iridium atoms of the first, second, and third layer.
地址 Minato-ku, Tokyo JP