发明名称 |
Iridium tip, gas field ion source, focused ion beam apparatus, electron source, electron microscope, electron beam applied analysis apparatus, ion-electron multi-beam apparatus, scanning probe microscope, and mask repair apparatus |
摘要 |
There is provided an iridium tip including a pyramid structure having one {100} crystal plane as one of a plurality of pyramid surfaces in a sharpened apex portion of a single crystal with <210> orientation. The iridium tip is applied to a gas field ion source or an electron source. The gas field ion source and/or the electron source is applied to a focused ion beam apparatus, an electron microscope, an electron beam applied analysis apparatus, an ion-electron multi-beam apparatus, a scanning probe microscope or a mask repair apparatus. |
申请公布号 |
US9583299(B2) |
申请公布日期 |
2017.02.28 |
申请号 |
US201414455338 |
申请日期 |
2014.08.08 |
申请人 |
Hitachi High-Tech Science Corporation |
发明人 |
Kozakai Tomokazu;Matsuda Osamu;Sugiyama Yasuhiko;Aita Kazuo;Aramaki Fumio;Yasaka Anto;Oba Hiroshi |
分类号 |
H01J1/304;H01J37/073;H01J37/08;G01Q60/10;G01Q60/24;G01Q70/16;H01J37/21;H01J37/28 |
主分类号 |
H01J1/304 |
代理机构 |
Banner & Witcoff, Ltd. |
代理人 |
Banner & Witcoff, Ltd. |
主权项 |
1. An iridium tip comprising a pyramid structure wherein an apex portion of the pyramid structure has an apex with <210> orientation surrounded by one {100} crystal plane and two {111} crystal planes,
wherein the pyramid structure includes a first layer composed of a single iridium atom constituting the apex of the pyramid structure, a second layer immediately below the first layer and composed of three iridium atoms located at vertices of a triangle, and a third layer immediately below the second layer and composed of six iridium atoms located at vertices and sides of a triangle, and wherein the crystal planes of the pyramid structure are defined by the iridium atoms of the first, second, and third layer. |
地址 |
Minato-ku, Tokyo JP |