Non-volatile memory apparatus sensing current changing according to data stored in memory cell

摘要

A nonvolatile memory apparatus includes a sensing voltage generation unit, a memory cell, a current copy unit and a data sensing unit. The sensing voltage generation unit provides a sensing voltage with a constant level, to a sensing node. The memory cell receives the sensing voltage from the sensing node. The current copy unit generates copied current with substantially the same magnitude as sensing current which flows through the memory cell. The data sensing unit senses the copied current and generates a multi-bit data output signal.

主权项

1. A nonvolatile memory apparatus comprising:
a sensing voltage generation unit configured to provide a sensing voltage with a constant level, to a sensing node; a memory cell connected with the sensing node at one end thereof and configured to receive the sensing voltage; a column switch configured to connect the sensing node and the one end of the memory cell in response to a bit line select signal; a row switch configured to connect the other end of the memory cell with a ground voltage in response to a word line select signal; and a data sensing unit connected between the other end of the memory cell and the row switch, and configured to sense sensing current which flows through the memory cell and generate a data output signal.