发明名称 System and method for a switchable capacitance
摘要 In accordance with an embodiment, a switchable capacitance circuit includes a plurality of capacitance-switch cells that each have a capacitance circuit having a capacitance between a first terminal and a second terminal of the capacitance circuit, and a semiconductor switching circuit including a first terminal coupled to the first terminal of the capacitance circuit, a plurality of series connected radio-frequency (RF) switch cells having a load path and a common node. Each of the plurality of series connected RF switch cells has a switch transistor and a gate resistor having a first end coupled to a gate of the switch transistor and a second end coupled to the common node. The switchable capacitance circuit also includes a resistance circuit having a first end coupled to the common node and a second end coupled to a control node.
申请公布号 US9584097(B2) 申请公布日期 2017.02.28
申请号 US201414264937 申请日期 2014.04.29
申请人 Infineon Technologies AG 发明人 Bakalski Winfried
分类号 H03H11/28;H03K17/687;H03J5/24 主分类号 H03H11/28
代理机构 Slater Matsil, LLP 代理人 Slater Matsil, LLP
主权项 1. A switchable capacitance circuit comprising: a plurality of capacitance-switch cells, wherein each capacitance-switch cell comprises: a capacitance circuit having a capacitance between a first terminal and a second terminal of the capacitance circuit; anda semiconductor switching circuit comprising a first terminal coupled to the first terminal of the capacitance circuit,a plurality of series connected radio-frequency (RF) switch cells comprising a load path and a common node, wherein each of the plurality of series connected RF switch cells comprises a switch transistor and a gate resistor having a first end coupled to a gate of the switch transistor and a second end coupled to the common node, anda resistance circuit having a first end coupled to the common node and a second end coupled to a control node, wherein the resistance circuit comprises a resistance between the first end and the second end,wherein the gate resistor in each of the plurality of RF switch cells has a same resistance value,wherein the switch transistors in a first of the plurality of capacitance-switch cells has a first width, the switch transistors in a second of the plurality of capacitance-switch cells has a second width, and the first width is different from the second width, andwherein the resistance circuit in the first of the plurality of capacitance-switch cells is configured to set a switching time of the first of the plurality of capacitance-switch cells to substantially match a switching time of the second of the plurality of capacitance-switch cells, the resistance of the resistance circuit for first of the plurality of capacitance-switch cells being different from the resistance of the resistance circuit for the second of the plurality of capacitance-switch cells.
地址 Neubiberg DE