发明名称 Inkjet printable etch resist
摘要 The methods involve selectively depositing a resist containing a solid hydrogenated rosin resin and a liquid hydrogenated rosin resin ester as a mixture on a semiconductor followed by etching uncoated portions of the semiconductor and simultaneously inhibiting undercutting of the resist. The etched portions may then be metallized to form current tracks.
申请公布号 US9583669(B2) 申请公布日期 2017.02.28
申请号 US201213587916 申请日期 2012.08.16
申请人 Sun Chemical Corporation 发明人 Dong Hua;Barr Robert K.
分类号 H01L21/302;H01L21/461;C03C15/00;C03C25/68;C23F1/00;H01L31/18;H01L21/28;H01L21/027;H01L21/47;H01L21/3115;H01L21/02;C08L93/04;C09D11/08;C09D11/34 主分类号 H01L21/302
代理机构 Ostrolenk Faber LLP 代理人 Achkar Charles C.;Ostrolenk Faber LLP
主权项 1. A method comprising: a) providing a doped semiconductor wafer comprising a front side, a back side, and a pn junction; b) selectively applying a resist composition on top of the front side of the semiconductor wafer, the resist composition comprises one or more hydrogenated rosin resins, the hydrogenated rosin resins are solids at room temperature, one or more hydrogenated rosin resin esters, the hydrogenated rosin resin esters are liquids at room temperature, wherein a weight ratio of the one or more hydrogenated rosin resins to the one or more hydrogenated rosin resin esters is 2:1 to 4:1 and one or more fatty acids; and c) applying an etch composition to the semiconductor to etch away exposed sections of the front side of the semiconductor to form current tracks.
地址 Parsippany NJ US