Methods of manufacturing semiconductor devices

摘要

In a method of manufacturing a semiconductor device, a dummy gate structure is formed on a substrate. A first spacer layer is formed on the substrate to cover the dummy gate structure. A nitridation process is performed on the first spacer layer. An upper portion of the substrate adjacent to the dummy gate structure is removed to form a trench. An inner wall of the trench is cleaned. An epitaxial layer is formed to fill the trench. The dummy gate structure is replaced with a gate structure.

主权项

1. A method of manufacturing a semiconductor device, the method comprising:
forming a dummy gate structure on a substrate; forming a spacer layer on the substrate to cover the dummy gate structure; subsequently performing an implantation process comprising implanting impurities into an upper portion of the substrate using the dummy gate structure as a mask to thereby form an impurity region of the substrate adjacent to the dummy gate structure; subsequently nitriding the spacer layer; etching the nitrided spacer layer to form a spacer on a side surface of the dummy gate structure; forming a trench in the substrate by removing an upper portion of the substrate adjacent to the dummy gate structure; cleaning an interior surface that defines the trench; forming an epitaxial layer in the trench; and replacing the dummy gate structure with a gate structure.