发明名称 |
Method of making high electron mobility transistor structure |
摘要 |
A method includes epitaxially growing a gallium nitride (GaN) layer over a silicon substrate. The method further includes epitaxially growing a donor-supply layer over the GaN layer. The method further includes forming a source and a drain on the donor-supply layer. The method further includes forming a gate structure between the source and the drain on the donor-supply layer. The method further includes plasma etching a portion of a drift region of the donor-supply layer to a depth of less than 60% of a donor-supply layer thickness. The method further includes depositing a dielectric layer over the donor-supply layer. |
申请公布号 |
US9583588(B2) |
申请公布日期 |
2017.02.28 |
申请号 |
US201414533864 |
申请日期 |
2014.11.05 |
申请人 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
发明人 |
Yu Chen-Ju;Hsiung Chih-Wen;Yao Fu-Wei;Hsu Chun-Wei;Wong King-Yuen;Yu Jiun-Lei Jerry;Yang Fu-Chih |
分类号 |
H01L29/778;H01L29/06;H01L21/335;H01L21/336;H01L29/66;H01L29/423;H01L29/10;H01L29/20;H01L21/02;H01L21/225;H01L21/3065;H01L21/3205;H01L21/321;H01L21/3213;H01L21/324;H01L29/201;H01L29/205 |
主分类号 |
H01L29/778 |
代理机构 |
Haynes and Boone, LLP |
代理人 |
Haynes and Boone, LLP |
主权项 |
1. A method comprising:
epitaxially growing a gallium nitride (GaN) layer over a silicon substrate; epitaxially growing a donor-supply layer over the GaN layer, wherein the donor-supply layer is grown to have a top surface; forming a source and a drain on a first region and second region the donor-supply layer, respectively; forming a gate structure between the source and the drain on a third region of the donor-supply layer, the gate structure being disposed on the top surface; plasma etching a plurality of recesses in a portion of a drift region of the donor-supply layer to a depth of less than 60% of a donor-supply layer thickness from the top surface, wherein the plurality of recesses interpose the third region and the second region of the donor-supply layer, and wherein a portion of the top surface of the donor-supply layer interposes each of the plurality of recesses; and depositing a dielectric layer over the top surface of the donor-supply layer and in the plurality of recesses to form a plurality of dielectric plugs interposing the region and the gate region. |
地址 |
Hsin-Chu TW |