Semiconductor device

摘要

A conductor provided in an interconnection layer is allowed to have a low resistance. An insulator film is provided over a substrate, and is comprised of SiO(1-x)Nx (where x>0.5 in an XRD analysis result). An interconnection is provided over the insulator film, and includes a first layer and a second layer. The first layer includes at least one of TiN, TaN, WN, and RuN. The second layer is provided over the first layer, and is formed of a material having a resistance lower than the first layer, for example, W.

主权项

1. A semiconductor device, comprising:
a substrate; an interlayer insulator film provided over the substrate, an insulator film provided over the interlayer insulator film, thinner than the interlayer insulator film, and comprised of SiO(1-x)Nx (where x>0.1); and an interconnection provided over the insulator film, wherein the interconnection includes a first layer on the insulator film and a second layer provided over the first layer, wherein the first layer includes at least one of TiN, TaN, WN, and RuN, and wherein the second layer is a W layer.