发明名称 |
Method for producing ultra-thin tungsten layers with improved step coverage |
摘要 |
A tungsten nucleation film is formed on a surface of a semiconductor substrate by alternatively providing to that surface, reducing gases and tungsten-containing gases. Each cycle of the method provides for one or more monolayers of the tungsten film. The film is conformal and has improved step coverage, even for a high aspect ratio contact hole. |
申请公布号 |
US9583385(B2) |
申请公布日期 |
2017.02.28 |
申请号 |
US201514738685 |
申请日期 |
2015.06.12 |
申请人 |
Novellus Systems, Inc. |
发明人 |
Lee Sang-Hyeob;Collins Joshua |
分类号 |
H01L21/768;H01L23/52;C23C16/02;C23C16/04;C23C16/14;C23C16/455;H01L21/285 |
主分类号 |
H01L21/768 |
代理机构 |
Weaver Austin Villeneuve & Sampson LLP |
代理人 |
Weaver Austin Villeneuve & Sampson LLP |
主权项 |
1. A method of forming a tungsten nucleation layer a surface of a semiconductor substrate comprising the steps of:
positioning said semiconductor substrate at a deposition station within a deposition chamber; performing an initiation soak step, comprising exposure of the substrate to a gas in a gaseous or plasma state; after the initiation soak step, flowing a reducing gas into said deposition chamber whereby about one or more monolayers of reducing gas are deposited onto said surface of said substrate; purging the reducing gas from the deposition chamber; and
flowing a tungsten-containing gas into said deposition chamber, whereby deposited reducing gas is replaced by tungsten to provide said nucleation layer in a surface controlled deposition process. |
地址 |
Fremont CA US |