Semipolar nitride semiconductor structure and method of manufacturing the same

摘要

Provided are a semipolar nitride semiconductor structure and a method of manufacturing the same. The semipolar nitride semiconductor structure includes a silicon substrate having an Si(11k) surface satisfying 7≦k≦13; and a nitride semiconductor layer formed on the silicon substrate. The nitride semiconductor layer has a semipolar characteristic in which a polarization field is approximately 0.

主权项

1. A method of manufacturing a semipolar nitride structure, the method comprising:
preparing a silicon substrate having a Si(11k) surface satisfying 7≦k≦13; performing anisotropic etching on the Si(11k) surface of the prepared silicon substrate so that, at least at a first region of the Si(11k) surface of the silicon substrate, a Si(111) facet is exposed by a larger amount than a Si(100) facet; and growing a nitride semiconductor layer on the first region of the silicon substrate, wherein the nitride semiconductor layer has a semipolar characteristic in which a polarization field is approximately 0.