Transistors with uniform density of poly silicon

摘要

A transistor with uniform density of poly silicon includes a gate terminal, a drain terminal, and a source terminal. The gate terminal is constructed by a plurality of separated poly silicon, such that the density of the poly silicon is uniform.

主权项

1. A current source device, comprising:
a plurality of current source units, arranged along a plurality of rows and a plurality of columns of a current source array, wherein each of the current source units comprises a first amount of sub-units, wherein each of the sub-units comprises a second amount of first-type transistors, wherein the first-type transistors are coupled in series with each other and the sub-units are coupled in parallel with each other; a plurality of least significant bits, wherein each of the least significant bits comprises a third amount of the current source units; and a plurality of most significant bits, wherein each of the most significant bits comprises a fourth amount of the current source units, wherein the fourth amount is the third amount multiplied by a positive integer, wherein each of the current source units is constructed by a fifth amount of the first-type transistors, such that a poly silicon density of the first-type transistor is uniform to reduce an influence of a gradient in the poly silicon density of the current source units and to increase an output impedance of each of the current source units.