| 发明名称 | Solid state diffusion doping for bulk finFET devices | ||
| 摘要 | A method of forming a semiconductor device comprises forming a first fin on a substrate, depositing an insulator layer on the substrate adjacent to the first fin, removing a first portion of the insulator layer to expose a first portion of a sidewall of the first fin, depositing a layer of spacer material over the first portion of the sidewall of the first fin, removing a second portion of the insulator layer to expose a second portion of the sidewall of the first fin, depositing a first glass layer including a first doping agent over the exposed second portion of the sidewall of the first fin, and performing a first annealing process to drive the first doping agent into the first fin. | ||
| 申请公布号 | US9583489(B1) | 申请公布日期 | 2017.02.28 |
| 申请号 | US201614991417 | 申请日期 | 2016.01.08 |
| 申请人 | INTERNATIONAL BUSINESS MACHINES CORPORATION | 发明人 | Anderson Brent A.;Jagannathan Hemanth;Mehta Sanjay C.;Pranatharthiharan Balasubramanian |
| 分类号 | H01L27/092;H01L21/8238;H01L29/66;H01L29/06 | 主分类号 | H01L27/092 |
| 代理机构 | Cantor Colburn LLP | 代理人 | Cantor Colburn LLP ;Bortnick Bryan |
| 主权项 | 1. A method of forming a semiconductor device, the method comprising: forming a first fin on a substrate; depositing an insulator layer on the substrate adjacent to the first fin; removing a first portion of the insulator layer to expose a first portion of a sidewall of the first fin; depositing a layer of spacer material over the first portion of the sidewall of the first fin; removing a second portion of the insulator layer to expose a second portion of the sidewall of the first fin; depositing a first glass layer including a first doping agent over the exposed second portion of the sidewall of the first fin; and performing a first annealing process to drive the first doping agent into the first fin. | ||
| 地址 | Armonk NY US | ||