Lateral power MOSFET

摘要

A lateral power MOSFET structure is disclosed. In some embodiments, a semiconductor device comprises substantially concentric source, channel, and drain regions; a metal layer at least in part comprising a drain plane disposed over the source, channel, and drain regions; and a metal layer at least in part comprising a source plane disposed over the source, channel, and drain regions.

主权项

1. A semiconductor device, comprising:
a source region completely surrounded by substantially concentric channel and drain regions and a central body contact encircled by the source region; a first inner metal layer comprising a first drain plane disposed over the source, channel, and drain regions, wherein the first inner metal layer comprises a single plane that has one or more openings for connections; a second inner metal layer comprising a second drain plane disposed over the first inner metal layer, wherein the second inner metal layer comprises a single plane that has one or more openings for connections; and a top metal layer comprising a top source plane disposed over the inner metal layers, wherein the top source plane comprises a single plane that substantially comprises the top metal layer.