Polycrystalline oxide thin-film transistor array substrate and method of manufacturing same

摘要

This invention provides a polycrystalline oxide thin-film transistor (TFT) array substrate and a method of manufacturing the same. As the polycrystalline oxide thin film layer of the polycrystalline oxide TFT array substrate is formed by a two-step process according to the present invention, the ultra-high temperature annealing process required in the prior art is obviated, and the object of producing a polycrystalline oxide TFT array substrate by the existing manufacturing facilities of the amorphous oxide TFT array substrates is achieved without adding any special equipment or special operation, and it is easy to implement; meanwhile, the energy consumption is reduced as the high temperature annealing is no longer needed.

主权项

1. A method of manufacturing a polycrystalline oxide thin-film transistor array substrate, characterized in that the method comprises the following steps:
1) forming an amorphous oxide thin film layer on a substrate; 2) selectively etching the amorphous oxide thin film layer; 3) passivating and annealing the amorphous oxide thin film layer after the step 2; 4) forming a second oxide thin film on the oxide thin film layer after the step 3; and 5) annealing the second oxide thin film formed in the step 4;wherein the step 4 further comprises forming active layer channels by a patterning process after the formation of the second oxide film; or the step 5 further comprises forming active layer channels by a patterning process after annealing the second oxide thin film.