Photolithographic method

摘要

A method for performing photolithography using a photo-resist is disclosed. The photo-resist comprises a first component and a second component. The method includes providing a substrate having a surface coated with the photo-resist and selectively illuminating a region of the surface of the photo-resist using light in a first wavelength band. The method further includes illuminating the entire surface of the photo-resist using light in a second wavelength band. The first and second wavelength bands are different and may not overlap. The method also includes performing a development process for the photo-resist upon illumination with the light of the first and second wavelength bands.

主权项

1. A method for performing photolithography comprising:
providing a substrate having a surface coated with a photo-resist, the photo-resist comprising a matrix resin, a first component, and a second component; selectively illuminating a first region of a surface of the photo-resist using light in a first wavelength band, thereby generating a first chemical substance in the photo-resist, wherein the first chemical substance is capable of reacting with the matrix resin to form a latent image on the photo-resist, wherein a first mass concentration of the first chemical substance is higher in the first region than in a second region of the surface of the photo-resist that is not selectively illuminated using the light in the first wavelength band; uniformly illuminating the surface of the photo-resist including the first region and the second region using light in a second wavelength band after selectively illuminating the first region of the surface of the photo-resist using the light in the first wavelength band, thereby generating a second chemical substance in the photo-resist, wherein the second chemical substance has a second mass concentration that is uniformly distributed throughout the photo-resist, wherein the second chemical substance is capable of reacting with the first chemical substance, and the second mass concentration of the second chemical substance has a uniform value that is larger than a minimum value of the first mass concentration of the first chemical substance in the second region; wherein, after uniformly illuminating the surface of the photo-resist using light in the second wavelength band, the first chemical substance in the second region is fully reacted by a chemical reaction with the second chemical substance in the second region such that no first chemical substance remains in the second region after the chemical reaction, and a remaining amount of the second chemical substance that has not reacted with the first chemical substance in the second region diffuses from the second region into the first region; controlling a diffusion length of the second chemical substance from the second region to the first region by controlling an amount of energy of the light in the second wavelength band and a mass concentration of the second component in the photo-resist, thereby further reducing the first mass concentration of the first chemical substance in the first region, and increasing a gradient of the first mass concentration of the first chemical substance in the photo-resist and enhancing a contrast of the latent image; performing a development process for the photo-resist using the enhanced latent image; and forming a desired photo-resist pattern on the substrate.