发明名称 Method of lithographically transferring a pattern on a light sensitive surface and illumination system of a microlithographic projection exposure apparatus
摘要 A method of lithographically transferring a pattern on a light sensitive surface in a multiple exposure process comprises the following steps: a) providing a mask comprising a first mask pattern area and a second mask pattern area;b) directing projection light on the mask, thereby producing on the light sensitive surface a first exposed pattern area, which is an image of the first mask pattern area, and a second exposed pattern area, which is an image of the second mask pattern area. The projection light illuminating the first and second mask pattern area has different angular light distributions.c) repeating step b) using the same mask so that an image of the first mask pattern area is superimposed on the second exposure pattern area.
申请公布号 US9581910(B2) 申请公布日期 2017.02.28
申请号 US201514747441 申请日期 2015.06.23
申请人 Carl Zeiss SMT GmbH 发明人 Schlesener Frank;Saenger Ingo;Dittmann Olaf;Goehnermeier Aksel;Pazidis Alexandra;Schicketanz Thomas;Patra Michael;Deguenther Markus
分类号 G03B27/54;G03F7/20 主分类号 G03B27/54
代理机构 Fish & Richardson P.C. 代理人 Fish & Richardson P.C.
主权项 1. A method of using a mask comprising a first mask pattern area and a second mask pattern area which is different from the first mask pattern area, the method comprising: a) directing projection light having a first angular distribution onto the first mask pattern area to produce a first exposed pattern area on a surface of a light sensitive material and directing projection light having a second angular distribution onto the second mask pattern area to produce a second exposed pattern area on the surface of the light sensitive material; and b) after a), directing projection light having the first angular distribution through the first mask pattern and on the second exposed pattern area, and simultaneously directing projection light having the second angular distribution through the second mask pattern and on a third exposed pattern area which is different from the first and second exposed pattern areas, and wherein the first angular distribution is different from the second angular distribution.
地址 Oberkochen DE