发明名称 |
Self aligned patterning with multiple resist layers |
摘要 |
A method for using self aligned multiple patterning with multiple resist layers includes forming a first patterned resist layer onto a substrate, forming a spacer layer on top of the first patterned resist layer such that spacer forms on side walls of features of the first resist layer, and forming a second patterned resist layer over the spacer layer and depositing a masking layer. The method further includes performing a planarizing process to expose the first patterned resist layer, removing the first resist layer, removing the second resist layer, and exposing the substrate. |
申请公布号 |
US9581900(B2) |
申请公布日期 |
2017.02.28 |
申请号 |
US201514753523 |
申请日期 |
2015.06.29 |
申请人 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
发明人 |
Shieh Ming-Feng;Lai Chih-Ming;Hsieh Ken-Hsien;Liu Ru-Gun;Chang Shih-Ming |
分类号 |
G03F7/20;G03F7/00;H01L21/033;G03F7/40 |
主分类号 |
G03F7/20 |
代理机构 |
Haynes and Boone, LLP |
代理人 |
Haynes and Boone, LLP |
主权项 |
1. A method comprising:
forming a first patterned resist layer over a substrate; forming a spacer layer over the first patterned resist layer such that the spacer layer covers the first patterned resist layer; forming a second patterned resist layer over the spacer layer; forming a hard mask layer over the second patterned resist layer; and removing a first portion of the second patterned resist layer and a portion of the spacer layer to expose the first patterned resist layer, wherein a second portion of the second patterned resist layer is disposed over the substrate after removing the first portion of the second patterned resist layer. |
地址 |
Hsin-Chu TW |