| 摘要 |
In the GOA circuit repair method provided by the present invention, the repair signal (Repair signal) is received by the GOA unit circuits of the Nth stage and the N+1th stage via the repair signal line (L1) respectively to be the output signal of the GOA unit circuit of the Nth stage, and the scan control signal of the GOA unit circuit of the N+1th stage to achieve the repair to the GOA unit circuit of the Nth stage; or the start signal (STV) is received by the GOA unit circuits of the N+1th stage and the N+2th stage via the start signal line (L5) respectively to be the output signal of the GOA unit circuit of the N+1th stage, and the scan control signal of the GOA unit circuit of the N+2th stage to achieve the repair to the GOA unit circuit of the N+1th stage, and meanwhile, the repair signal (Repair signal) is received by the GOA unit circuits of the N+2th stage and the N+3th stage via the repair signal line (L1) respectively to be the output signal of the GOA unit circuit of the N+2th stage, and the scan control signal of the GOA unit circuit of the N+3th stage to achieve the repair to the GOA unit circuit of the N+2th stage, it is capable of reducing the repair difficulty of the GOA circuit to raise the yield of the GOA production and to decrease the production cost. |
| 主权项 |
1. A GOA circuit repair method,
first providing a plurality of GOA unit circuit which are cascade connected, a repair signal and a repair signal line electrically coupled to the repair signal; wherein the GOA unit circuit of every stage comprises a pull-up controlling module, a pull-up module, a transmission module, a first pull-down module, a bootstrap capacitor and a pull-down holding module; N is set to be a positive integer and in the GOA unit circuit of Nth stage, the pull-up controlling module comprises an eleventh thin film transistor, and a gate of the eleventh thin film transistor receives a scan control signal of the GOA unit circuit of the former N−1th stage, and a source is electrically coupled to a constant high voltage level, and a drain is electrically coupled to a first node; the transmission module outputs a scan control signal of the GOA unit circuit of the latter N−1th stage; the pull-up module outputs a scan signal; the gate of the eleventh thin film transistor is electrically coupled to a gate lead, and the scan signal is outputted via a scan signal output line; then, performing detection to the GOA circuit, and the two GOA unit circuits of the Nth stage, the N+1th stage are took to be one set, and as that the GOA unit circuit of the Nth stage is in normal work is detected, the gate lead of the eleventh thin film transistor and the repair signal line in the GOA unit circuit of the Nth stage are insulation overlapping, and the scan signal output line and the repair signal line in the GOA unit circuit of the Nth stage are insulation overlapping; the gate lead of the eleventh thin film transistor and the repair signal line in the GOA unit circuit of the N+1th stage are insulation overlapping, and the scan signal output line and the repair signal line in the GOA unit circuit of the N+1th stage are insulation overlapping; as that the GOA unit circuit of the Nth stage is broken is detected, cutting the connection between the scan signal output line and the pull-up module in the GOA unit circuit of the Nth stage, and the connection between the gate of the eleventh thin film transistor in the GOA unit circuit of the N+1th stage and the scan control signal of the GOA unit circuit of the N+1th stage by laser, and conducting the scan signal output line and the repair signal line in the GOA unit circuit of the Nth stage, and the gate lead of the eleventh thin film transistor and the repair signal line in the GOA unit circuit of the N+1th stage by laser welding, and thus, the repair signal is received by the GOA unit circuits of the Nth stage, the N+1th stage respectively to be an output signal of the GOA unit circuit of the Nth stage, and the scan control signal of the GOA unit circuit of the N+1th stage. |
